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パワーデバイス開発職
| Hiring Company | 半導体メーカー |
| Location | Tokyo - 23 Wards |
| Job Type | Permanent Full-time |
| Salary | 5 million yen ~ 6 million yen |
Job Description
【求人No NJB2216588】
◆業務内容
化合物半導体を含むパワーデバイス開発
◆仕事内容
・Si ディスクリートデバイス企画/開発/評価
・化合物半導体パワーデバイス企画/開発/評価
*弊社はFABレスですので、ウエハファンダリなどとの開発協業になります。
General Requirements
| Minimum Experience Level | No experience |
| Career Level | Mid Career |
| Minimum English Level | Daily Conversation |
| Minimum Japanese Level | Native |
| Minimum Education Level | Technical/Vocational College |
| Visa Status | Permission to work in Japan required |
Required Skills
◆理系出身者（高専卒または大卒以上） ◆経験・スキル ・エンジニア歴5年以上 ・パワーデバイス開発経験者が望ましいJob Location
- Tokyo - 23 Wards
Work Conditions
| Job Type | Permanent Full-time |
| Salary | 5 million yen ~ 6 million yen |
| Work Hours | 09:00 ～ 17:30 |
| Holidays | 【有給休暇】初年度 10日 4か月目から 【休日】完全週休二日制 土 日 祝日 年末年始 土・日・祝日、慶弔休暇 年末年始（1… |
| Industry | Electronics, Semiconductor |
Job Category
- Electronics and Semiconductor Technology > Design, Development Engineer
