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【800～900万円】SiCエピタキシャル成長プロセス開発エンジニア [53044]
| Hiring Company | 大手半導体デバイスメーカー |
| Location | Ehime Prefecture |
| Job Type | Permanent Full-time |
| Salary | 8 million yen ~ 9 million yen |
Job Description
【求人No NJB2133826】
【担当技術】
SiCエピタキシャル成長プロセス開発エンジニア
【担当業務】
SiCエピタキシャル成長装置立ち上げ、プロセス条件出し、量産化
【担当職場】
自社前工程国内拠点
General Requirements
| Minimum Experience Level | No experience |
| Career Level | Mid Career |
| Minimum English Level | Business Level |
| Minimum Japanese Level | Native |
| Minimum Education Level | Bachelor's Degree |
| Visa Status | Permission to work in Japan required |
Required Skills
【MUST】 SiCエピタキシャル成長プロセス開発の従事経験が2年以上あること。 【WANT】 4年制大学または大学院にて工学、化学、物理学等を修了していること。Job Location
- Ehime Prefecture
Work Conditions
| Job Type | Permanent Full-time |
| Salary | 8 million yen ~ 9 million yen |
| Work Hours | 08:30 ～ 17:15 |
| Holidays | 【有給休暇】初年度 23日 1か月目から 【休日】完全週休二日制 土 日 祝日 夏季休暇 年末年始 【有給休暇】入社月に付与（… |
| Industry | Electronics, Semiconductor |
Job Category
- Electronics and Semiconductor Technology > Production Engineering (Electronics and Semiconductor Technology)
